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| MMBTSB1197 PNP Silicon Epitaxial Planar Transistor Low frequency transistor The transistor is subdivided into two groups Q and R according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS SOT-23 Plastic Package Value 40 32 5 800 200 150 -55 to +150 Unit V V V mA mW O C C O Characteristics at Ta =25 OC Parameter DC Current Gain at -VCE = 3 V, -IC = 100 mA Collector Cutoff Current at -VCB = 20 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 50 A Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 A Collector Saturation Voltage at -IC = 500 mA, -IB = 50 mA Output Capacitance at -VCB = 10 V, IE = 0 A, f = 1 MHz Transition Frequency at -VCE = 5 V, IE = 50 mA, f = 100 MHz Q R Symbol hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) Cob fT Min. 120 180 40 32 5 50 Max. 270 390 0.5 0.5 0.5 30 Unit A A V V V V pF MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 21/12/2005 MMBTSB1197 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 21/12/2005 |
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